advanced power n and p-channel enhancemen t electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 27m fast switching characteristic i d 7a p-ch bv dss -30v r ds(on) 49m description i d -5a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage -30 v v gs gate-source voltage 20 v i d @t a =25 continuous drain current 3 -5 a i d @t a =70 continuous drain current 3 -4.2 a i dm pulsed drain current 1 -30 a p d @t a =25 total power dissipation w linear derating factor w/ t stg storage temperature range t j operating junction temperature range symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice rohs-compliant product parameter 201030073-1/7 40 2 ap4501gsd thermal data 30 20 7 -55 to 150 0.016 -55 to 150 5.8 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. d1 d1 d2 d2 s1 g1 s2 g2 pdip-8 g2 d2 s2 g1 d1 s1
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 27 m v gs =4.5v, i d =5a - - 50 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 12 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =7a - 9 13 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 19 - ns t f fall time r d =15 -4- ns c iss input capacitance v gs =0v - 645 800 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =7a, v gs =0v, - 16 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc 2/7 ap4501gsd
ap4501gs d p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 49 m v gs =-4.5v, i d =-3a - - 75 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 5 - s i dss drain-source leakage current ( t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current ( t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =-5a - 8 15 nc q gs gate-source charge v ds =-15v - 1.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.5 - nc t d(on) turn-on delay time 2 v ds =-15v - 6.7 - ns t r rise time i d =-1a - 10 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 21 - ns t f fall time r d =15 -10- ns c iss input capacitance v gs =0v - 595 730 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-5a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.mounted on 1 in 2 copper pad of fr4 board ; 90 : /w when mounted on min. copper pad. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 3/7 this product has been qualified for consumer market. applications or uses as criterial component in life support
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4/7 ap4501gsd 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 6.0v 5.0v v g =4. 0 v 0.2 0.8 1.4 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g = 10v 10 40 70 100 25811 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 : 0 12 24 36 0235 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 8.0v 6.0v 5.0v v g =4.0v 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =150 o c t j =25 o c 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
ap4501gsd n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edanc e fig 11. switching time waveform fig 12. gate charge waveform 5/7 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =90 o c/w t t 0.02 0.0 1 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s 10s d c 0 3 6 9 12 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7.0a v ds =16v v ds =20v v ds =24v 10 100 1000 1 7 13 19 25 31 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 6/7 ap4501gsd 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g = -10v i d =-5.0a 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 40 50 60 70 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-5.0a t a =25 : 0.01 0.1 1 10 0.1 0.4 0.7 1 1.3 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized -v gs(th) (v)
ap4501gsd p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. switching time waveform fig 12. gate charge waveform 7/7 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =90 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s 10s dc 0 2 4 6 8 10 12 14 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5.0a v ds =-24v 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge
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